Engineer, design

Design/Senior Design Engineer – NAND datapath (NVE Engineering) Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Department Introduction The Non-Volatile NAND Design Engineering group is responsible for the design and optimization of analog, digital and mixed‑signal circuits enabling advanced NAND Flash memory products. Close collaboration with cross‑functional teams ensures scalable, manufacturable, and reliable solutions across technology nodes. Position Overview As a Design Engineer in the NVE Design Engineering Datapath group at Micron Semiconductor Italia, you will contribute to the development of best‑in‑class NAND Flash memory products, focusing on datapath architectures and high‑speed interfaces. In this role, you will support the design, optimization, and validation of NAND datapath logic and DDR high‑speed interfaces, working at block and sub‑system level and contributing to full‑chip integration. You will apply your expertise in high‑speed CMOS circuits, timing, signal integrity, and power optimization, using both industry‑standard tools and Micron‑proprietary methodologies. Responsibilities Design and optimize high‑speed datapath and interface circuits, ensuring timing closure and performance at block and sub‑system level. Translate system and interface requirements into circuit architectures and transistor‑level implementations, balancing performance, power, and area. Perform functional, timing, and signal integrity verification using advanced simulation methodologies (including PVT and corner analysis). Collaborate with cross‑functional teams to ensure proper floorplan integration, manufacturability, and alignment with product specifications. Develop and apply automation solutions (e.g., scripting, AI‑assisted methodologies) and support silicon validation, debug, and documentation. Minimum Qualifications M. S. or Ph. D. in Electrical Engineering, Electronics, or a related field. Strong knowledge of high‑speed digital, analog, and mixed‑signal CMOS circuit design. Solid understanding of timing, signal integrity, noise, variability, and deep‑submicron device effects. Hands‑on experience with industry‑standard simulation tools (e.g., SPICE, mixed‑signal, RTL/Verilog‑based flows). Strong problem‑solving and communication skills, with ability to work effectively in dynamic, cross‑functional environments. Preferred Qualifications Experience in NAND Flash or other non‑volatile memory technologies. Experience with high‑speed interfaces (e.g., DDR, LPDDR, GDDR, or Ser Des). Familiarity with design automation, scripting (e.g., Python), or AI‑assisted design approaches. Understanding of layout constraints, physical design flows, and ESD considerations. Salary & Benefits The base salary range that Micron estimates it could pay for this position full‑time is: €34,000.00 – €57,000.00 per year, with B2 CCNL Level. The pay scale is subject to change depending on business needs. In addition to base pay, the remuneration package also includes a variable plan subject to the personal achievement of objectives and the company's performance. Benefits (currently) include meal vouchers, corporate welfare, yearly allowance of remote working days, supplementary health insurance, life coverage, and an Employee Assistance Program. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status. Remuneration is determined by objective criteria, regardless of gender and of any other factor protected by applicable federal, state, or local laws. #J-18808-Ljbffr